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The V-defect is a naturally occurring inverted hexagonal pyramid structure that has been studied in GaN and InGaN growth since the 1990s. Strategic use of V-defects in pre-quantum well superlattices or equivalent preparation layers has enabled record breaking efficiencies for green, yellow, and red InGaN light emitting diodes (LEDs) utilizing lateral injection of holes through the semi-polar sidewalls of the V-defects. In this article, we use advanced characterization techniques such as scattering contrast transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy, x-ray fluorescence maps, and atom probe tomography to study the active region compositions, V-defect formation, and V-defect structure in green and red LEDs grown on (0001) patterned sapphire and (111) Si substrates. We identify two distinct types of V-defects. The “large” V-defects are those that form in the pre-well superlattice and promote hole injection, usually nucleating on mixed (Burgers vector b=±a±c) character threading dislocations. In addition, “small” V-defects often form in the multi-quantum well region and are believed to be deleterious to high-efficiency LEDs by providing non-radiative pathways. The small V-defects are often associated with basal plane stacking faults or stacking fault boxes. Furthermore, we show through scattering contrast transmission electron microscopy that during V-defect filling, the threading dislocation, which runs up the center of the V-defect, will “bend” onto one of the six {101¯1} semi-polar planes. This result is essential to understanding non-radiative recombination in V-defect engineered LEDs.

Metasurface‐based optical elements offer a wide design space for miniature and lightweight optical applications. Typically, metasurface optical elements transform an incident light beam into a desired output waveform. Recent demonstrations of light‐emitting metasurfaces highlight the potential for directly producing desired output waveforms via metasurface‐mediated spontaneous emission. In this work, reciprocal finite‐difference time‐domain (FDTD) simulations and machine learning are used to enable the inverse design of highly unidirectional photoluminescent III‐Nitride quantum well metasurfaces capable of directivep‐,s‐, or combinedp‐ ands‐ polarized emission at arbitrary angles. In comparison with previous intuition‐guided designs using the same quantum well architectures, the inverse design approach enables new polarization capabilities and experimentally demonstrated improvements in directivity of 54%. An analysis of ways in which the inverse design both validates and contradicts previous intuition‐guided design heuristics is presented. Ultimately, the combination of reciprocal simulations and efficient global optimization (EGO) grants remarkable improvements in emission directivity and results in full control over the polarization and momentum of emitted light, including simultaneous directional emission ofs‐ andp‐polarized light.

Nanoscale light emitting diodes (nanoLEDs, diameter < 1 µm), with active and sacrificial multi-quantum well (MQW) layers epitaxially grown via metal organic chemical vapor deposition, were fabricated and released into solution using a combination of colloidal lithography and photoelectrochemical (PEC) etching of the sacrificial MQW layer. PEC etch conditions were optimized to minimize undercut roughness, and thus limit damage to the active MQW layer. NanoLED emission was blue-shifted ∼10 nm from as-grown (unpatterned) LED material, hinting at strain relaxation in the active InGaN MQW layer. X-ray diffraction also suggests that strain relaxation occurs upon nanopatterning, which likely results in less quantum confined Stark effect. Internal quantum efficiency of the lifted nanoLEDs was estimated at 29% by comparing photoluminescence at 292K and 14K. This work suggests that colloidal lithography, combined with chemical release, could be a viable route to produce solution-processable, high efficiency nanoscale light emitters.

AlGaN-based germicidal UV LEDs show promise in fighting the COVID-19 pandemic through disinfection of air, water, and surfaces. We report UV LEDs grown by MOCVD on SiC substrates, fabricated into thin-film flip chip devices. Replacing theuniformp-Al_xGa_1-xN layer (x = 0.2) with ashort-period-superlatticeof alternating (x = 0.1 and 0.8) Al-composition improved EQE from 1.3% to 2.7% (3.2% with encapsulation) at 20 A/cm². Peak EQE and WPE values of 4.8% and 2.8% (287 nm) were measured at current densities below 2 A/cm², and maximum output power of 7.4 mW (76 mW/mm²) was achieved at 284 nm. Further WPE improvements are expected with both superlattice and uniform layer optimization, improved p-contact metallization, and active region optimization.